dpf 60 im 400 hb final ns hiperfred2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 600 i a v f 1.27 r 0.55 k/w v r = 2 1 3 min. 60 t = 10 ms applications: v rrm v 400 1 t vj v c = t vj c =m a 0.5 package: part number v r = t vj =c i f =a v t c = 130c d = p tot 275 w t c c = t vj 175 c -55 v i rrm = = 400 60 60 t vj = 45c dpf 60 im 400 hb v a 400 v 400 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.53 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.76 t vj = 175c r f 4.9 f = 1 mhz = c 25 m ? v 1.09 t vj =c i f =a v 60 1.39 i f =a 120 i f =a 120 threshold voltage slope resistance for power loss calculation only backside: cathode 6a t vj =c reverse recovery time a 12 60 105 ns (50 hz), sine t rr = 60 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-247 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 60 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 270 t vj =c 25 t= 125c vj a 61 200 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20100216a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpf 60 im 400 hb final i rms a per pin 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 6 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpf 60 im 400 hb 503573 tube 30 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d p f 60 im 400 hb part number diode hiperfred ultra fast single diode to-247ad (3) = = = dpg60im400qb dpg60i400ha to-3p (3) to-247ad (2) similar part package 1) 1) marking on product DPF60IM400HB 400 400 voltage class current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. ? 20100216a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpf 60 im 400 hb final sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.215 bsc 5.46 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. ? 20100216a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpf 60 im 400 hb final 0.0 0.4 0.8 1.2 1.6 2.0 20 40 60 80 100 120 0 200 400 600 60 70 80 90 100 110 120 10 0 10 1 10 2 10 3 10 4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 04080120160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 k f t vj [c] -di f /dt [a/s] t [ms] 0 200 400 600 200 400 600 800 1000 1200 1400 1600 1800 4 6 8 10 12 0 200 400 600 0 5 10 15 20 25 30 0 200 400 600 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 q rr [c] v f [v] -di f /dt [a/s] z thjc [k/w] i rm q rr v fr t fr t vj = 150c fig. 1 forward current i f versus forward voltage v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. reverse recovery current i rm versus -di f /dt fig. 4 dynamic parameters q rr ,i rm versus t vj fig. 5 typ. reverse recovery time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr & forward recovery time t fr vs. di f /dt fig. 8 transient thermal impedance junction to case 25c i f [a] -di f /dt [a/s] i rm [a] t rr [ns] -di f /dt [a/s] t fr [ns] v fr [v] 0 200 400 600 0 10 20 30 40 50 60 70 80 e rec [j] -di f /dt [a/s] fig. 7 typ. recovery energy e rec versus -di f /dt i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a t vj = 125c v r = 270 v t vj = 125c v r = 270 v t vj = 125c v r = 270 v t vj = 125c v r = 270 v i f =60a t vj = 125c v r =270 v ixys reserves the right to change limits, conditions and dimensions. ? 20100216a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
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